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This is manufactured by onsemi. The manufacturer part number is 2SD1111. The maximum collector current includes 700 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 5000 @ 50ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. In addition, it is reach unaffected. The transistor is a npn - darlington type. The 1.2v @ 100µa, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. 3-np is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 600 mw. The product is designated with the ear99 code number.
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