NXP Semiconductors PEMD19,115

PEMD19-115 NXP Semiconductors PEMD19,115
NXP Semiconductors

Product Information

Resistor - Base (R1):
22kOhms
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
-
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
Manufacturer:
NXP Semiconductors
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-666
Packaging:
Bulk
Power - Max:
300mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is PEMD19,115. Resistor - Base - 22kohms. The maximum collector current includes 100ma. The maximum collector emitter breakdown voltage of the product is 50v. Moreover, the product comes in sot-563, sot-666. Furthermore, 100 @ 1ma, 5v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The nxp semiconductors's product offers user-desired applications. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The 150mv @ 500µa, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-666 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 300mw.

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