NXP Semiconductors 2PD2150,115

2PD2150-115 NXP Semiconductors 2PD2150,115
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0075
Voltage - Collector Emitter Breakdown (Max):
20 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-243AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 100mA, 2V
Frequency - Transition:
220MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 2A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-89
Power - Max:
2 W
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is 2PD2150,115. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0075. The maximum collector emitter breakdown voltage of the product is 20 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-243aa. Furthermore, 180 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 220mhz. The 500mv @ 100ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-89 is the supplier device package value. The maximum power of the product is 2 w. The product is designated with the ear99 code number.

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