Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
750 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Operating Frequency:
1 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
10 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 500mA, 1V
Frequency - Transition:
150MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 2A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
750 mW
Base Product Number:
KSC5019
ECCN:
EAR99
