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Fujitsu Semiconductor MB85R256GPF-G-BND-ERE1

Fujitsu Semiconductor

Product Information

HTSUS:
0000.00.0000
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
150ns
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
256Kb (32K x 8)
Package / Case:
-
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Access Time:
150 ns
Mounting Type:
-
Series:
-
Supplier Device Package:
-
Memory Type:
Non-Volatile
Voltage - Supply:
2.7V ~ 3.6V
ECCN:
OBSOLETE
Technology:
FRAM (Ferroelectric RAM)
Base Product Number:
MB85R256
Memory Format:
FRAM
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This is manufactured by Fujitsu Semiconductor. The manufacturer part number is MB85R256GPF-G-BND-ERE1. It is assigned with possible HTSUS value of 0000.00.0000. It is a parallel memory interface. It allows a 150ns of write cycle time. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 256kb (32k x 8). It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 3 (168 hours). It allows 150 ns access time. It is a type of non-volatile memory type. It has optimum voltage supply of 2.7v ~ 3.6v. The product is designated with the obsolete code number. This product use fram (ferroelectric ram) technology. Moreover, it corresponds to mb85r256, a base product number of the product. It is a sort of fram memory.

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