Fujitsu Semiconductor MB85R256FPF-G-BNDE1

MB85R256FPF-G-BNDE1 Fujitsu Semiconductor
Fujitsu Semiconductor

Product Information

HTSUS:
8542.32.0071
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
150ns
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
256Kb (32K x 8)
Package / Case:
28-SOIC (0.342", 8.69mm Width)
Package:
Tray
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Access Time:
150 ns
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
28-SOP
Memory Type:
Non-Volatile
Voltage - Supply:
2.7V ~ 3.6V
ECCN:
EAR99
Technology:
FRAM (Ferroelectric RAM)
Base Product Number:
MB85R256
Memory Format:
FRAM
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This is manufactured by Fujitsu Semiconductor. The manufacturer part number is MB85R256FPF-G-BNDE1. It is assigned with possible HTSUS value of 8542.32.0071. It is a parallel memory interface. It allows a 150ns of write cycle time. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 256kb (32k x 8). Moreover, the product comes in 28-soic (0.342", 8.69mm width). It is shipped in tray package . Its typical moisture sensitivity level is 1 (unlimited). It allows 150 ns access time. The product is available in surface mount configuration. 28-sop is the supplier device package value. It is a type of non-volatile memory type. It has optimum voltage supply of 2.7v ~ 3.6v. The product is designated with the ear99 code number. This product use fram (ferroelectric ram) technology. Moreover, it corresponds to mb85r256, a base product number of the product. It is a sort of fram memory.

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New Package Specifications 12/May/2015(PCN Assembly/Origin)
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MB85R256F(Datasheets)

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