Toshiba Semiconductor and Storage TCK425G,L3F

TCK425G-L3F Toshiba Semiconductor and Storage TCK425G,L3F
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8542.39.0001
RoHS Status:
ROHS3 Compliant
DigiKey Programmable:
Not Verified
Operating Temperature:
-40°C ~ 85°C (TA)
Input Type:
Non-Inverting
Package / Case:
6-XFBGA, WLCSP
Current - Peak Output (Source, Sink):
-
Rise / Fall Time (Typ):
-
REACH Status:
REACH Unaffected
edacadModel:
TCK425G,L3F Models
edacadModelUrl:
/en/models/16378661
Manufacturer:
Toshiba Semiconductor and Storage
Gate Type:
N-Channel MOSFET
Channel Type:
Single
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Logic Voltage - VIL, VIH:
0.4V, 1.2V
standardLeadTime:
52 Weeks
Driven Configuration:
High-Side
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-WCSPG (0.8x1.2)
Number of Drivers:
1
Packaging:
Tape & Reel (TR)
Voltage - Supply:
2.7V ~ 28V
Base Product Number:
TCK425
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TCK425G,L3F. It is assigned with possible HTSUS value of 8542.39.0001. The product is rohs3 compliant. The product has -40°c ~ 85°c (ta) operating temperature range. It carries non-inverting input type. Moreover, the product comes in 6-xfbga, wlcsp. In addition, it is reach unaffected. The toshiba semiconductor and storage's product offers user-desired applications. It is a n-channel mosfet gate. The product is available in [Cannel Type] channel. Its typical moisture sensitivity level is 1 (unlimited). Logic voltage of 0.4v, 1.2v. It has a long 52 weeks standard lead time. It has a high-side driven configuration. The product is available in surface mount configuration. 6-wcspg (0.8x1.2) is the supplier device package value. Number of Drivers equals 1. In addition, tape & reel (tr) is the available packaging type of the product. It has optimum voltage supply of 2.7v ~ 28v. Moreover, it corresponds to tck425, a base product number of the product. The product is designated with the ear99 code number.

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