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The 2ED2109S06FXUMA1 is a high-geared Half-Bridge Gate Driver IC tailored for efficient control and switching of power MOSFETs or IGBTs. Its under-voltage lockout and shoot-through protection is suitable for power conversion and motor drives.
The Infineon Technologies 2ED2109S06FXUMA1 is a high-geared Half-Bridge Gate Driver IC built for power electronics applications. This non-inverting IC provides efficient control and switching of power MOSFETs or IGBTs in half-bridge configurations. It is created for half-bridge topologies, making it well-suited for numerous power conversion and motor drive applications.
The 2ED2109S06FXUMA1 is tailored for non-inverting half-bridge configurations, where an external signal controls one leg of the bridge while the gate driver complements the other leg. This configuration allows for efficient and synchronous operation of power switches.
The gate driver is engineered for high-speed switching, enabling efficient power conversion and minimising switching losses. Its precise control over power switches enhances system performance and overall power efficiency.
The 2ED2109S06FXUMA1 is offered in a PG-DSO-8-53 package, providing a compact and reliable solution for surface-mount applications. The package's thermal characteristics contribute to the IC's ability to handle high-power applications.
With its high current handling capability, the 2ED2109S06FXUMA1 can effectively drive power MOSFETs and IGBTs with low switching times and reduced voltage overshoots.
The driver comes with integrated features such as under-voltage lockout (UVLO) and shoot-through protection, ensuring the safe and reliable operation of the power switches.
The Infineon Technologies 2ED2109S06FXUMA1 gate driver finds applications in diverse industries, including:
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