Mounting Type:
Through Hole
Maximum Power Dissipation:
240 W
Height:
16.51mm
Width:
4.8mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2.4V
Transistor Material:
SiC
Maximum Operating Temperature:
+175 °C
Pin Count:
2 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
FFSP3065
Detailed Description:
Diode Silicon Carbide Schottky 650V 30A (DC) Through Hole TO-220-2L
Current - Reverse Leakage @ Vr:
200µA @ 650V
Operating Temperature - Junction:
-55°C ~ 175°C
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
650V
Capacitance @ Vr, F:
1705pF @ 1V, 100kHz
Voltage - Forward (Vf) (Max) @ If:
1.75V @ 30A
Supplier Device Package:
TO-220-2L
Packaging:
Tube
Customer Reference:
Current - Average Rectified (Io):
30A (DC)
Package / Case:
TO-220-2
Diode Type:
Silicon Carbide Schottky
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
