ON Semiconductor EGP30B

EGP30B ON Semiconductor
EGP30B
ON Semiconductor

Product Information

Diameter:
5.6mm
Mounting Type:
Through Hole
Peak Reverse Recovery Time:
50ns
Peak Non-Repetitive Forward Surge Current:
125A
Maximum Forward Voltage Drop:
950mV
Maximum Continuous Forward Current:
3A
Diode Technology:
Silicon Junction
Package Type:
DO-201AD
Number of Elements per Chip:
1
Diode Type:
Silicon Junction
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
100V
Base Part Number:
EGP30
Detailed Description:
Diode Standard 100V 3A Through Hole DO-201AD
Reverse Recovery Time (trr):
50ns
Current - Reverse Leakage @ Vr:
5µA @ 100V
Operating Temperature - Junction:
-65°C ~ 150°C
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
100V
Capacitance @ Vr, F:
95pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If:
950mV @ 3A
Supplier Device Package:
DO-201AD
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
3A
Package / Case:
DO-201AD, Axial
Diode Type:
Standard
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is EGP30B. Its diameter is 5.6mm. The product is available in through hole configuration. Moreover, it has a peak reverse recovery time about 50ns . Moreover, a bespoke product has 125a peak non-repetitive forward surge current. It features 950mv of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 3a. The product utilizes silicon junction diode technology. The package is a sort of do-201ad. It consists of 1 elements per chip. It is designed with a silicon junction diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 100v. Base Part Number: egp30. It features diode standard 100v 3a through hole do-201ad. It has a trr (reverse recovery time) of 50ns. 5µa @ 100v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -65°c ~ 150°c. While it has maximum reverse voltage of 100v. Moreover, the product has a 95pf @ 4v, 1mhz capacitance. The product has a maximum forward voltage of 950mv @ 3a. do-201ad is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 3a of average rectified current. Moreover, the product comes in do-201ad, axial. It is designed with a standard diode. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.

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EGP30A - EGP30K, 3.0 Amperes Glass Passivated High Efficiency Rectifiers Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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EGP30A - EGP30K(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Materials 23/Mar/2007(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

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You will get a confirmation email regarding your order of ON Semiconductor EGP30B. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor EGP30B.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14517024 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search&nbsp;"ON Semiconductor" products on our website by using Enrgtech's Unique&nbsp;Manufacturing Part Number ET14517024.
Yes. We ship EGP30B Internationally to many countries around the world.