ON Semiconductor 1N4001RLG

1N4001RLG ON Semiconductor
1N4001RLG
1N4001RLG
ON Semiconductor

Product Information

Diameter:
2.7mm
Mounting Type:
Through Hole
Maximum Operating Temperature:
+175 °C
Maximum Forward Voltage Drop:
1.1V
Height:
5.2mm
Diode Technology:
Silicon Junction
Package Type:
DO-41
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Diode Configuration:
Single
Pin Count:
2
Base Part Number:
1N4001
Detailed Description:
Diode Standard 50V 1A Through Hole DO-41
Current - Reverse Leakage @ Vr:
10µA @ 50V
Operating Temperature - Junction:
-65°C ~ 175°C
Mounting Type:
Through Hole
Voltage - DC Reverse (Vr) (Max):
50V
Voltage - Forward (Vf) (Max) @ If:
1.1V @ 1A
Supplier Device Package:
DO-41
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
1A
Package / Case:
DO-204AL, DO-41, Axial
Diode Type:
Standard
Speed:
Standard Recovery >500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is 1N4001RLG. Its diameter is 2.7mm. The product is available in through hole configuration. It has a maximum operating temperature of +175 °c. It features 1.1v of maximum forward voltage drop. In addition, the height is 5.2mm. The product utilizes silicon junction diode technology. The package is a sort of do-41. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The diode features a single configuration. It contains 2 pins. Base Part Number: 1n4001. It features diode standard 50v 1a through hole do-41. 10µa @ 50v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -65°c ~ 175°c. While it has maximum reverse voltage of 50v. The product has a maximum forward voltage of 1.1v @ 1a. do-41 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 1a of average rectified current. Moreover, the product comes in do-204al, do-41, axial. It is designed with a standard diode. It has a robust speed of standard recovery >500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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1N400yyy Die Chg 1/Mar/2018(PCN Assembly/Origin)
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1N4001-4007 Datasheet(Datasheets)

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FAQs

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