Toshiba Semiconductor and Storage TK290P60Y,RQ

TK290P60Y-RQ Toshiba Semiconductor and Storage TK290P60Y,RQ
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 600V 11.5A (Tc) 100W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4V @ 450µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
TCV7101
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
290mOhm @ 5.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
730pF @ 300V
Mounting Type:
Surface Mount
Series:
DTMOSV
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
Customer Reference:
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK290P60Y,RQ. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 600v 11.5a (tc) 100w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4v @ 450µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: tcv7101. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 290mohm @ 5.8a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 730pf @ 300v. The product is available in surface mount configuration. The product dtmosv, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11.5a (tc). The product carries maximum power dissipation 100w (tc). This product use mosfet (metal oxide) technology.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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