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Toshiba Semiconductor and Storage TK6P65W,RQ

TK6P65W-RQ Toshiba Semiconductor and Storage TK6P65W,RQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
1.05Ohm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs(th) (Max) @ Id:
3.5V @ 180µA
edacadModel:
TK6P65W,RQ Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5456321
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
390 pF @ 300 V
Mounting Type:
Surface Mount
Series:
DTMOSIV
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5.8A (Ta)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK6P65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK6P65W,RQ. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 1.05ohm @ 2.9a, 10v. The maximum gate charge and given voltages include 11 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.5v @ 180µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 390 pf @ 300 v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. dpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 5.8a (ta). The product carries maximum power dissipation 60w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk6p65, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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You can order Toshiba Semiconductor and Storage brand products with TK6P65W,RQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK6P65W,RQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK6P65W,RQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11745474 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11745474.
Yes. We ship TK6P65W,RQ Internationally to many countries around the world.
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