Forward Voltage Vf:
1.5V
Width:
10.4 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
80nC
Package Type:
TO-220
Maximum Continuous Drain Current Id:
55A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
45mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
28.9mm
Standards/Approvals:
UL
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
245W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
STP
Height:
4.6mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
45mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STP65N045M9 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/16546727
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
245W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4610 pF @ 400 V
standardLeadTime:
22 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP65N
ECCN:
EAR99
