STMicroelectronics SCT040H65G3AG

SCT040H65G3AG STMicroelectronics
SCT040H65G3AG
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
30 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
H2PAK-7
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
55mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs:
39.5 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+18V, -5V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
221W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
920 pF @ 400 V
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
H2PAK-7
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT040
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is SCT040H65G3AG. It has a maximum of 650 v drain source voltage. While 30 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of h2pak-7. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 55mohm @ 20a, 18v. The maximum gate charge and given voltages include 39.5 nc @ 18 v. The typical Vgs (th) (max) of the product is 4.2v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +18v, -5v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 221w (tc). The product's input capacitance at maximum includes 920 pf @ 400 v. It has a long 52 weeks standard lead time. The product is automotive, a grade of class. h2pak-7 is the supplier device package value. The continuous current drain at 25°C is 30a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct040, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
Datasheet - SCT040H65G3AG(Technical Reference)
pdf icon
SCT040H65G3AG(Datasheets)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search SCT040H65G3AG on website for other similar products.
We accept all major payment methods for all products including ET23425616. Please check your shopping cart at the time of order.
You can order STMicroelectronics brand products with SCT040H65G3AG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics SCT040H65G3AG. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics SCT040H65G3AG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23425616 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23425616.
Yes. We ship SCT040H65G3AG Internationally to many countries around the world.