N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STMicroelectronics STWA68N65DM6

STWA68N65DM6 N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STMicroelectronics
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
STWA68N65DM6
Channel Type:
N
Maximum Gate Threshold Voltage:
4.75V
Maximum Drain Source Resistance:
0.059 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
48 A
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
59mOhm @ 24A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STWA68N65DM6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/18086018
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3528 pF @ 100 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247 Long Leads
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Power Dissipation (Max):
431W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STWA68
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 48 A 650 V 3-Pin TO-247 manufactured by STMicroelectronics. The manufacturer part number is STWA68N65DM6. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product stwa68n65dm6, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.059 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 48 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 59mohm @ 24a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 3528 pf @ 100 v. to-247 long leads is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 55a (tc). The product carries maximum power dissipation 431w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stwa68, a base product number of the product. The product is designated with the ear99 code number.

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DataSheet - STWA68N65DM6(Technical Reference)

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