Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
30 A
Mounting Type:
Surface Mount
Transistor Material:
Si
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
110 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1154 pF @ 800 V
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTBG080
ECCN:
EAR99
