Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
5mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
63 nC @ 10 V
Channel Type:
P
Length:
5.99mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
45 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
20 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
14mOhm @ 10A, 10V
title:
SQJ415EP-T1_GE3
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
Vendor Undefined
edacadModel:
SQJ415EP-T1_GE3 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/8572045
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
45W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
6000 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Supplier Device Package:
PowerPAK® SO-8
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ415
ECCN:
EAR99
