Maximum Continuous Drain Current:
6.5 A
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.5 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.3 W
Series:
STripFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
1.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
50mOhm @ 2A, 10V
title:
STN4NF03L
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STN4NF03L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/768301
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.3W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Gate Charge (Qg) (Max) @ Vgs:
9 nC @ 10 V
Supplier Device Package:
SOT-223
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STN4NF03
ECCN:
EAR99
