Maximum Drain Source Voltage:
20 V
Maximum Continuous Drain Current:
20 A
Channel Mode:
Enhancement
Series:
NexFET
Channel Type:
P
Maximum Gate Threshold Voltage:
0.55V
Maximum Drain Source Resistance:
2390000 Ω
Package Type:
WSON
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
6
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
CSD2531
Gate Charge (Qg) (Max) @ Vgs:
4.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
23.9mOhm @ 5A, 4.5V
FET Type:
P-Channel
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
655pF @ 10V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Customer Reference:
Power Dissipation (Max):
2.9W (Ta)
Technology:
MOSFET (Metal Oxide)
