Maximum Drain Source Voltage:
450 V
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
MDmesh K3, SuperMESH3
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
1.8mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
3V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
600 mA
Transistor Material:
Si
Channel Type:
N
Maximum Drain Source Resistance:
3.8 Ω
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
4Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
9.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STN3N45K3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2346745
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
450 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
164 pF @ 50 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
SuperMESH3™
Supplier Device Package:
SOT-223
Current - Continuous Drain (Id) @ 25°C:
600mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STN3
ECCN:
EAR99
