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Cambridge GaN Devices (CGD) is a renowned semiconductor corporation specialising in gallium nitride (GaN) technology. Founded in Cambridge, UK, in 2016, it focuses on designing energy-efficient GaN transistors that sweeten power device performance. CGD's innovations offer considerable benefits in terms of power efficiency, size reduction, and thermal management. Established from the University of Cambridge's research, CGD focuses on GaN transistors that offer exceptional performance than traditional silicon-based counterparts. CGD's creative approach and cutting-edge technology contribute immensely to lessening energy consumption and carbon footprint, aligning with global sustainability goals.
650V GAN HEMT, 130MOHM, DFN5X6.
650V GAN HEMT, 55MOHM, DFN8X8. W
650V GAN HEMT, 200MOHM, DFN5X6.
650V GAN HEMT, 240MOHM, DFN5X6.
650V GAN HEMT, 130MOHM, DFN8X8.
