Category:
Power MOSFET
Dimensions:
2.1 x 2.1 x 0.6mm
Maximum Continuous Drain Current:
10 A
Width:
2.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
HUML2020L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1460 pF @ 15 V
Length:
2.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
54 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
RF4E100AJ
Maximum Gate Source Voltage:
±12 V
Height:
0.6mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
17.9 mΩ
