Category:
Power MOSFET
Dimensions:
15.8 x 5 x 18.9mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Drain Source Resistance:
1.4 Ω
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2100 pF@ 25 V
Length:
15.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
18.9mm
Typical Turn-On Delay Time:
50 ns
Minimum Operating Temperature:
-55 °C
