Category:
Power MOSFET
Dimensions:
20.82 x 15.87 x 4.82mm
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Width:
15.87mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
105 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5100 pF @ 25 V
Length:
20.82mm
Pin Count:
3
Typical Turn-Off Delay Time:
215 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
625 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.82mm
Typical Turn-On Delay Time:
140 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
120 mΩ
