Category:
Power MOSFET
Dimensions:
6.55 x 3.55 x 1.65mm
Maximum Continuous Drain Current:
320 mA
Transistor Material:
Si
Width:
3.55mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
85 pF @ 25 V
Length:
6.55mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
±20 V
Height:
1.65mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10 Ω
