Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 1.3mm
Maximum Continuous Drain Current:
4.6 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SOT-26
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.1 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
820 pF @ -15 V
Length:
3.1mm
Pin Count:
6
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.3mm
Typical Turn-On Delay Time:
4.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
70 mΩ
