Dimensions:
3.35 x 3.35 x 0.8mm
Maximum Continuous Drain Current:
10.5 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
3V
Package Type:
POWERDI3333
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
56.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2737 pF @ 35 V
Length:
3.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
19.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Typical Turn-On Delay Time:
6.1 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.72V
Maximum Drain Source Resistance:
28 mΩ
