Category:
Power MOSFET
Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
115 mA
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-363
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
P
Typical Input Capacitance @ Vds:
22 pF@ 25V, 30 pF@ -0.5 V
Length:
2.2mm
Pin Count:
6
Forward Transconductance:
80S
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.15 W
Maximum Gate Source Voltage:
±20 (Continuous) V, ±40 (Pulsed) V
Height:
1mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13.5 Ω
