Category:
Power MOSFET
Dimensions:
10.3 x 4.6 x 15.8mm
Maximum Continuous Drain Current:
32 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
16 mΩ
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
46.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2404 pF @ 50 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
46.1 W
Maximum Gate Source Voltage:
±20 V
Height:
15.8mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
