Category:
Power MOSFET
Dimensions:
10.67 x 4.7 x 16.3mm
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
190 pF @ -25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
16.3mm
Typical Turn-On Delay Time:
8.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.7 Ω
FET Feature:
-
HTSUS:
8542.39.0001
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.7Ohm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Affected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Power Dissipation (Max):
52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
