Category:
High Voltage
Dimensions:
10.67 x 4.83 x 16.51mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
57 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2220 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
64 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
SuperFET
Maximum Gate Source Voltage:
±20 V, ±30 V ac
Height:
16.51mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
199 mΩ
