Dimensions:
10.36 x 4.672 x 15.215mm
Maximum Continuous Drain Current:
37 A
Transistor Material:
Si
Width:
4.672mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4610 pF @ 25 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
102 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
357 W
Series:
SuperFET II
Maximum Gate Source Voltage:
±20 (DC) V, ±30 (AC) V
Height:
15.215mm
Typical Turn-On Delay Time:
34 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
104 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
145 nC @ 10 V
Rds On (Max) @ Id, Vgs:
104mOhm @ 18.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Power Dissipation (Max):
357W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6130 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
