Dimensions:
1.2 x 0.8 x 0.5mm
Maximum Continuous Drain Current:
330 mA
Transistor Material:
Si
Width:
0.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
VESM
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.2 nC @ 4 V
Channel Type:
P
Typical Input Capacitance @ Vds:
43 pF@ -10 V
Length:
1.2mm
Pin Count:
3
Typical Turn-Off Delay Time:
200 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.15 W
Series:
SSM3
Maximum Gate Source Voltage:
±8 V
Height:
0.5mm
Typical Turn-On Delay Time:
90 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
