Name: GT50J342,Q(O, Toshiba
Brand: Toshiba
SKU: ET14149912
Price: 3.19 GBP
Availability: InStock

GT50J342-Q-O GT50J342,Q(O Toshiba IGBT, 80 A 600 V, 3-Pin TO-3P

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Product Information

Maximum Continuous Collector Current:

80 A

Dimensions:

15.5 x 4.5 x 20mm

Mounting Type:

Through Hole

Maximum Power Dissipation:

394 W

Maximum Operating Temperature:

175 °C

Maximum Collector Emitter Voltage:

600 V

Height:

20mm

Width:

4.5mm

Length:

15.5mm

Maximum Gate Emitter Voltage:

±25V

Package Type:

TO-3P

Energy Rating:

1.7mJ

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This is IGBT 80 A 600 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50J342,Q(O. The product has a maximum 80 a continuous collector current . The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 394 w maximum power dissipation. It has a maximum operating temperature of 175 °c. Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has approximately 1.7mj energy rating . It has about 0.38µs switching speed . The product is available in [Cannel Type] channel. It has approximately 4800pf gate capacitance . It contains 3 pins. The product offers single transistor configuration.

GT50J342, Silicon N-Channel IGBT(Technical Reference)

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GT50J342,Q(O Toshiba IGBT, 80 A 600 V, 3-Pin TO-3P

GT50J342,Q(O

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