Category:
Power MOSFET
Dimensions:
10 x 4.4 x 9.25mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
135 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
10770 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
41 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
188 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±20 V
Height:
9.25mm
Typical Turn-On Delay Time:
34 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.9 mΩ
