Renesas RJK6012DPP-E0#T2 N-channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP

RJK6012DPP-E0-T2 Renesas RJK6012DPP-E0#T2 N-channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP
RJK6012DPP-E0#T2
Renesas Electronics

Product Information

Category:
Power MOSFET
Dimensions:
10.16 x 4.7 x 15.87mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
920 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1100 pF @ 25 V
Length:
10.16mm
Pin Count:
3
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
30 W
Maximum Gate Source Voltage:
+30 V
Height:
15.87mm
Typical Turn-On Delay Time:
30 ns
Forward Diode Voltage:
1.5V
RoHs Compliant
Checking for live stock

This is Renesas N-channel MOSFET 10 A 600 V 3-Pin TO-220FP manufactured by Renesas Electronics. The manufacturer part number is RJK6012DPP-E0#T2. It is of power mosfet category . The given dimensions of the product include 10.16 x 4.7 x 15.87mm. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. It provides up to 920 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1100 pf @ 25 v . Its accurate length is 10.16mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 80 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. It features a maximum gate source voltage of +30 v. In addition, the height is 15.87mm. In addition, it has a typical 30 ns turn-on delay time . Its forward diode voltage is 1.5v .

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RJK6012DPP-E0 600V 10A(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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