Renesas NP82N055PUG-E2-AY N-channel MOSFET, 82 A, 55 V, 3-Pin TO-263

NP82N055PUG-E2-AY Renesas  N-channel MOSFET, 82 A, 55 V, 3-Pin TO-263
NP82N055PUG-E2-AY
Renesas Electronics

Product Information

Category:
Power MOSFET
Dimensions:
10 x 9.15 x 4.45mm
Maximum Continuous Drain Current:
82 A
Transistor Material:
Si
Width:
9.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
106 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6400 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
72 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
±20 V
Height:
4.45mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5 mΩ
RoHs Compliant
Checking for live stock

This is Renesas N-channel MOSFET 82 A 55 V 3-Pin TO-263 manufactured by Renesas Electronics. The manufacturer part number is NP82N055PUG-E2-AY. It is of power mosfet category . The given dimensions of the product include 10 x 9.15 x 4.45mm. While 82 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.15mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 106 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 6400 pf @ 25 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 72 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.8 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.45mm. In addition, it has a typical 40 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5 mω maximum drain source resistance.

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