Category:
Power MOSFET
Dimensions:
10 x 9.15 x 4.45mm
Maximum Continuous Drain Current:
110 A
Transistor Material:
Si
Width:
9.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
251 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
17100 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
131 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
±20 V
Height:
4.45mm
Typical Turn-On Delay Time:
63 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2 mΩ
