Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.1mm
Maximum Continuous Drain Current:
42 A
Transistor Material:
SiC
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
4.8V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.2V
Maximum Operating Temperature:
+135 °C
Typical Gate Charge @ Vgs:
90.8 nC @ 0/20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1915 pF @ 800 V
Length:
16.13mm
Pin Count:
3
Forward Transconductance:
7.9S
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
215 W
Maximum Gate Source Voltage:
-5/+20 V
Height:
21.1mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
3.5V
Maximum Drain Source Resistance:
120 mΩ
