Category:
Power MOSFET
Dimensions:
10.54 x 4.7 x 8.76mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
400 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
63 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1400 pF@ 25 V
Length:
10.54mm
Pin Count:
3
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
±20 V
Height:
8.76mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
550 mΩ
