Dimensions:
10.3 x 4.7 x 16mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
139 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
9961 pF @ 40 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
109 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
338 W
Maximum Gate Source Voltage:
±20 V
Height:
16mm
Typical Turn-On Delay Time:
41 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5.8 mΩ
