Category:
Power MOSFET
Dimensions:
3 x 1.4 x 1.1mm
Maximum Continuous Drain Current:
2.4 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.25V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.3 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
443 pF @ -16 V
Length:
3mm
Pin Count:
3
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
±12 V
Height:
1.1mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
125 mΩ
