Dimensions:
3.35 x 3.35 x 0.8mm
Maximum Continuous Drain Current:
11.3 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
POWERDI3333
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
697 pF @ 15 V
Length:
3.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
20.1 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W
Maximum Gate Source Voltage:
±25 V
Height:
0.8mm
Typical Turn-On Delay Time:
4.3 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
35 mΩ
