Dimensions:
1.075 x 0.675 x 0.48mm
Maximum Continuous Drain Current:
1.35 A
Transistor Material:
Si
Width:
0.675mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
X1-DFN1006
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.1 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
94 pF@ 16 V
Length:
1.08mm
Pin Count:
3
Typical Turn-Off Delay Time:
59.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Maximum Gate Source Voltage:
±8 V
Height:
0.48mm
Typical Turn-On Delay Time:
4.3 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
250 mΩ
