Category:
Power MOSFET
Dimensions:
3.35 x 3.35 x 0.85mm
Maximum Continuous Drain Current:
9.8 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
POWERDI3333
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
41 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
2246 pF @ -15 V
Length:
3.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W
Maximum Gate Source Voltage:
±25 V
Height:
0.85mm
Typical Turn-On Delay Time:
11.3 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
25 mΩ
