Category:
Power MOSFET
Dimensions:
10.3 x 4.7 x 9.4mm
Maximum Continuous Drain Current:
23 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
1278 pF@ 25 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
58 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
98 W
Maximum Gate Source Voltage:
±15 V
Height:
9.4mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
72 mΩ
