NXP BF998WR,115 N-channel MOSFET Tetrode, 30 mA, 12 V Depletion, 4-Pin CMPAK

BF998WR-115 NXP BF998WR,115 N-channel MOSFET Tetrode, 30 mA, 12 V Depletion, 4-Pin CMPAK
BF998WR,115
NXP

Product Information

Category:
RF MOSFET
Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
30 mA
Width:
1.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
CMPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
1.2 pF @ 8 V (Gate 2), 2.1 pF @ 8 V (Gate 1)
Length:
2.2mm
Pin Count:
4
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
0.3 W
Maximum Gate Source Voltage:
6 V
Height:
1mm
Minimum Operating Temperature:
-65 °C
RoHs Compliant
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This is N-channel MOSFET Tetrode 30 mA 12 V Depletion 4-Pin CMPAK manufactured by NXP. The manufacturer part number is BF998WR,115. It is of rf mosfet category . The given dimensions of the product include 2.2 x 1.35 x 1mm. While 30 ma of maximum continuous drain current. Furthermore, the product is 1.35mm wide. The product offers single transistor configuration. It has a maximum of 12 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of cmpak. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1.2 pf @ 8 v (gate 2), 2.1 pf @ 8 v (gate 1) . Its accurate length is 2.2mm. It contains 4 pins. The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 0.3 w maximum power dissipation. It features a maximum gate source voltage of 6 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -65 °c.

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BF998WR N-channel dual-gate MOS-FET Data Sheet(Technical Reference)

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