Category:
Power MOSFET
Dimensions:
20.82 x 15.87 x 4.82mm
Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Width:
15.87mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
118 nC @ 10 V, 206 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3565 pF @ 25 V
Length:
20.82mm
Pin Count:
3
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
UltraFET
Maximum Gate Source Voltage:
±20 V
Height:
4.82mm
Typical Turn-On Delay Time:
13.7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7 mΩ
