Category:
Power MOSFET
Dimensions:
20 x 5 x 26mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Maximum Drain Source Resistance:
18 mΩ
Package Type:
TO-3PL
Number of Elements per Chip:
1
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
360 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
15000 pF @ 300 V
Length:
20mm
Pin Count:
3
Typical Turn-Off Delay Time:
690 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
797 W
Series:
TK
Maximum Gate Source Voltage:
±30 V
Height:
26mm
Typical Turn-On Delay Time:
230 ns
